FMBA14の購入情報と機能
| この部品の機能は「NPN Multi-Chip Darlington Transistor」です。 |
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製品の詳細 ( データシート PDF )

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| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FMBBAS16 | 200mW EPITAXIAL PLANAR DIODES Data Sheet
200 mW EPITAXIAL PLANAR DIODES
Mechanical Dimensions
.110 .060 .037 .115 .037 2 3 1 .016
FMBBAS16
Description
Pin 3 Pin 1 NC
Pin 2
.043 .004
.016
Features
n PLANAR PROCESS n 200 mW POWER DISSIPATION
n INDUSTRY STANDARD SOT-23 PACKAGE n MEETS UL SPECIFICATION 94V-0 FMBBAS16 FMBBA |
![]() FCI |
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| FMB160 | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 100 Volts CURRENT 1.0 Ampere) RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FM120 THRU FM1100
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
VOLTAGE RANGE 20 to 100 Volts CURRENT 1.0 Ampere
FEATURES
* * * * * Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight |
Rectron Semiconductor |
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| FMB-34 | Schottky Barrier Diodes 40V Schottky Barrier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50H- Half-cycle Sinewave Single Shot
40V
Electrical Characteristics (Ta = 25°C) Others Rth ( j-c) (°C, W) Mass Fig. (g) IF (A) IR (mA) VR = VRM IR (H) (mA) VR=VRM, Ta=100°C
Tj (°C)
Tstg (°C)
ma |
![]() Sanken electric |
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| FMBL1G200US60 | Molding Type Module FMBL1G200US60
July 2001
IGBT
FMBL1G200US60
Molding Type Module
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninter |
Fairchild Semiconductor |
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