FMBBAS16の購入情報と機能
| この部品の機能は「200mW EPITAXIAL PLANAR DIODES」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| FMBBAS16 Diode | 200mW EPITAXIAL PLANAR DIODES Data Sheet
200 mW EPITAXIAL PLANAR DIODES
Mechanical Dimensions
.110 .060 .037 .115 .037 2 3 1 .016
FMBBAS16
Description
Pin 3 Pin 1 NC
Pin 2
.043 .004
.016
Features
n PLANAR PROCESS n 200 mW POWER DISSIPATION
n INDUSTRY STANDARD SOT-23 PACKAGE n MEETS UL SPECIFICATION 94V-0 FMBBAS16 FMBBA |
FCI |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FMB3906 | PNP Multi-Chip General Purpose Amplifier FFB3906 , FMB3906 , MMPQ3906
FFB3906
E2 B2 C1
FMB3906
C2 E1 C1 E1
MMPQ3906
E2 B2 E3 B3 E4 B4
B1
SC70-6
Mark: .2A
pin #1
C2 B1 E1
pin #1 B1
B2 E2 C2 C1 C3 C2
C4 C4 C3
NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientati |
 Fairchild Semiconductor |
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| FMB-G24 | Schottky Barrier Diodes 40V Schottky Barrier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50H- Half-cycle Sinewave Single Shot
40V
Electrical Characteristics (Ta = 25°C) Others Rth ( j-c) (°C, W) Mass Fig. (g) IR (mA) IF (A) VR = VRM max IR (H) (mA) VR = VRM Ta =100°C max
Tj (°C)
Tst |
 Sanken electric |
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| FMB-26 | Schottky Barrier Diodes 60V Schottky Barrier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50H- Half-cycle Sinewave Single Shot
60V
Electrical Characteristics (Ta = 25°C) Others Rth ( j-c) Mass Remarks Fig. (°C, W) (g) 1 Chip A IF (A) IR (mA) VR = VRM IR (H) (mA) VR=VRM, Ta=100°C
Tj (° |
Sanken electric |
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| FMBBAS20 | 200mW EPITAXIAL PLANAR DIODES Data Sheet
200 mW EPITAXIAL PLANAR DIODES
Mechanical Dimensions
.110 .060 .037 .115 .037 2 3 1 .016
Description
Pin 3 Pin 1 NC
Pin 2
.043 .004
.016
Features n PLANAR PROCESS n 200 mW POWER DISSIPATION Electrical Characteristics @ 25 O C. Maximum Ratings Peak Reverse Voltage...VRM RMS Reverse |
FCI |
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