FMB-34の購入情報と機能

Data Sheet 200 mW EPITAXIAL PLANAR DIODES Mechanical Dimensions .110 .060 .037 .115 .037 2 3 1 .016 Description Pin 3 Pin 1 NC Pin 2 .043 .004 .016 Features n PLANAR PROCESS n 200 mW POWER DISSIPATION Electrical Characteristics @ 25 O C. Maximum Ratings Peak Reverse Voltage...VRM RMS Reverse

Schottky Barrier Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A) 50H- Half-cycle Sinewave Single Shot 60V Electrical Characteristics (Ta = 25°C) Others Rth ( j-c) Mass Remarks Fig. (°C, W) (g) 1 Chip A IF (A) IR (mA) VR = VRM IR (H) (mA) VR=VRM, Ta=100°C Tj (°

FMBM5401 PNP General Purpose Amplifier FMBM5401 PNP General Purpose Amplifier This device has matched dies in SuperSOT-6. C2 E1 C1 B2 E2 pin #1 B1 SuperSOTTM-6 Mark: .4S2 Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, TSTG Notes: 1. These ratings are based on a maximum junction temp

Schottky Barrier Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A) 50H- Half-cycle Sinewave Single Shot 90V Electrical Characteristics (Ta = 25°C) Others Rth ( j-c) Mass Remarks Fig. (°C, W) (g) 1 Chip A IF (A) IR (mA) VR = VRM IR (H) (mA) VR=VRM, Ta=100°C Tj (°