TPCP8601の購入情報と機能
| この部品の機能は「Field Effect Transistor Silicon MOS Type」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| TPCP8601 Transistor | Field Effect Transistor Silicon MOS Type TPCP8601
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
TPCP8601
High-Speed Switching Applications DC-DC Converter Applications Strobo Flash Applications
High DC current gain: hFE = 200 to 500 (IC = 0.6 A) Low collector-emitter saturation: VCE (sat) = 0.19 V (max) High-speed swit |
Toshiba Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| TPCS8303 | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
TPCS8303
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
TPCS8303
Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools
Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.) High forward t |
Toshiba Semiconductor |
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| TPCS8212 | Silicon N Channel MOS Type (U-MOSIII) TPCS8212
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPCS8212
Lithium Ion Battery Applications
Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage cu |
Toshiba Semiconductor |
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| TPCT4204 | Field Effect Transistor Silicon N Channel MOS Type TPCT4204
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS )
TPCT4204
Lithium Ion Secondary Battery Applications
Lead(Pb)-Free Small footprint due to small and thin package Low source-source ON resistance: RSS (ON) = (22)mΩ (typ.) High forward transfer admittance: |Yfs| = ( |
Toshiba Semiconductor |
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| TPCS8208 | Silicon N Channel MOS Type Field Effect Transistor TPCS8208
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPCS8208
Lithium Ion Battery Applications
Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage curr |
Toshiba Semiconductor |
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