TPCT4204の購入情報と機能

TPC8126 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8126 Lithium Ion Battery Applications Power Management Switch Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.5 mΩ (typ.) Low leakage current: IDSS = 10 μA

TPC6001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC6001 Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = 10 A (max) (

TPC8085 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8085 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = 10 V) Low le

TP Series Pushbutton Switches, Tiny, Part Number Matrix MATERIAL SPECIFICATIONS: Contacts ......................................Gold - gold plate, silver - silver plate Case Material..............................High temperature polyester Actuator Material........................Polyamide Terminals