TPCP8306の購入情報と機能
| この部品の機能は「MOSFET, Transistor」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| TPCP8306 MOSFET | MOSFET, Transistor TPCP8306
MOSFETs Silicon P-Channel MOS (U-MOS )
TPCP8306
1. Applications
Notebook PCs Mobile Handsets
2. Features
(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 47 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 A (max) (VDS |
Toshiba Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| TPCP8510 | Field Effect Transistor Silicon MOS Type TPCP8510
TOSHIBA Transistor Silicon NPN Epitaxial Type
TPCP8510
High-Speed, High-Voltage Switching Applications DC-DC Converter Applications
High DC current gain: hFE = 120 to 300 (IC = 0.1 A) Low collector-emitter saturation: VCE (sat) = 0.14 V (max) High-speed switching: tf = 0.2 μs (typ)
0. |
Toshiba Semiconductor |
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| TPCS8210 | SILICON N CHANNEL MOS TYPE LITHIUM BATTERY APPLICATIONS | Toshiba Semiconductor |
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| TPCA8109 | Silicon P Channel MOS Type TPCA8109
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)
TPCA8109
Lithium Ion Battery Applications Power Management Switch Applications
8
Unit: mm
1.27 0.4 ± 0.1 5 0.05 M A
Low drain-source ON-resistance: RDS (ON) = 7 mΩ (typ.) Low leakage current: IDSS = 10 μA (ma |
Toshiba Semiconductor |
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| TPCP8105 | MOSFET, Transistor TPCP8105
MOSFETs Silicon P-Channel MOS (U-MOS )
TPCP8105
1. Applications
Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs
2. Features
(1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 13.8 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = - |
Toshiba Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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