TPCP8105の購入情報と機能
| この部品の機能は「MOSFET, Transistor」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| TPCP8105 MOSFET | MOSFET, Transistor TPCP8105
MOSFETs Silicon P-Channel MOS (U-MOS )
TPCP8105
1. Applications
Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs
2. Features
(1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 13.8 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = - |
Toshiba Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| TPC8A01 | FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE | Toshiba Semiconductor |
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| TPCC8064-H | MOSFET, Transistor TPCC8064-H
MOSFETs Silicon N-Channel MOS (U-MOS -H)
TPCC8064-H
1. Applications
High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets
2. Features
(1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 5.0 nC (typ.) Low drain-source on-resistance: RDS(ON |
 Toshiba |
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| TPCP8406 | MOSFET, Transistor TPCP8406
MOSFETs Silicon P-, N-Channel MOS (U-MOS , U-MOS -H)
TPCP8406
1. Applications
Cell Phones Motor Drivers
2. Features
(1) Low drain-source on-resistance P-channel RDS(ON) = 33 mΩ (typ.) (VGS = -10 V), N-channel RDS(ON) = 24 mΩ (typ.) (VGS = 10 V) (2) Low leakage current P-channel IDSS |
Toshiba Semiconductor |
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| TPCA8103 | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
TPCA8103
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ)
TPCA8103
0.5±0.1
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
6.0±0.3
Unit: mm
1.27 8 0.4±0.1 5 0.05 M A
Small footprint due to small and thin package Low drain |
Toshiba Semiconductor |
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