SIR872ADPの購入情報と機能

Sensors Infrared light emitting diode, top view type SIR-563ST3F The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940 nm peak wavelength suitable for silicon detectors. It has a wide radiation angle and is ideal for co

New Product N-Channel 25-V (D-S) MOSFET SiR862DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0028 at VGS = 10 V 25 0.0035 at VGS = 4.5 V ID (A)a, e 50 50 Qg (Typ.) 28.4 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg and UIS Te

www.vishay.com SiR472ADP Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) ( ) MAX. 0.0090 at VGS = 10 V 0.0115 at VGS = 4.5 V ID (A) a, g 18 18 Qg (TYP.) 9 nC PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 Top View 5.15 mm 1 2S 3S 4S G Bottom View Ordering

N-Channel 30 V (D-S) MOSFET SiR172ADP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) ( ) Max. 30 0.0085 at VGS = 10 V 0.0105 at VGS = 4.5 V ID (A)a, g 24 24 Qg (Typ.) 12.8 nC PowerPAK SO-8 FEATURES TrenchFET® Power MOSFET Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profi