SIR862DPの購入情報と機能

New Product N-Channel 40-V (D-S) MOSFET SiR836DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.019 at VGS = 10 V 40 0.0225 at VGS = 4.5 V PowerPAK SO-8 ID (A)a, e 21 19.6 Qg (Typ.) 5.8 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100

New Product SiR464DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0031 at VGS = 10 V 0.0038 at VGS = 4.5 V ID (A)a, e 50 26.5 nC 50 Qg (Typ.) FEATURES Halogen-free TrenchFET® Power MOSFET 100 % Rg and UIS Tested RoHS COMPLIANT PowerPAK SO-8 APPLIC

Sensors Infrared light emitting diode, top view type SIR-56ST3F The SIR-56ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950 nm spectrum suitable for silicon detectors. Low cost make it an ideal light source for household remot

SiR872ADP Vishay Siliconix N-Channel 150 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 150 RDS(on) ( ) Max. 0.0180 at VGS = 10 V 0.0230 at VGS = 7.5 V ID (A)g 53.7 45 Qg (Typ.) 22.8 nC FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS Tested Material categorization: For definitions of compliance plea