SIR402DPの購入情報と機能
| この部品の機能は「N-Channel MOSFET」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| SIR402DP MOSFET | N-Channel MOSFET N-Channel 30-V (D-S) MOSFET
SiR402DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.006 at VGS = 10 V 30
0.008 at VGS = 4.5 V
PowerPAK SO-8
ID (A)a 35 35
Qg (Typ.) 12 nC
6.15 mm
D 8D
7 D
6 D
5
S 1S
5.15 mm
2 S
3 G
4
Bottom View Ordering Information: SiR402DP-T1-GE3 (Lead (Pb) |
Vishay Siliconix |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| SIR878DP | N-Channel 100 V (D-S) MOSFET New Product
SiR878DP
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 100 RDS(on) ( ) 0.014 at VGS = 10 V 0.0148 at VGS = 7.5 V 0.019 at VGS = 4.5 V ID (A)a 40 38 34 13.6 nC Qg (Typ.)
FEATURES
Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 |
 Vishay |
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| SIR67-21C-L9-TR10 | Top Infrared LED Technical Data Sheet
Top Infrared LED
SIR67-21C, L9, TR10
Features
Peak wavelength λp=875nm. Low forward voltage. Compatible with infrared and vapor phase reflow solder process. Pb free The product itself will remain within RoHS compliant version.
Descriptions
SIR67-21C, L9, TR10 is an infrar |
 Everlight Electronics |
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| SiR404DP | N-Channel 20 V (D-S) MOSFET New Product
SiR404DP
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20 RDS(on) (Ω) 0.00160 at VGS = 10 V 0.00175 at VGS = 4.5 V 0.00225 at VGS = 2.5 V ID (A)a 60 60 60 64.5 nC Qg (Typ.)
FEATURES
Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Gen III Power |
Vishay |
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| SIRA04DP | N-Channel 30V (D-S) MOSFET New Product
N-Channel 30 V (D-S) MOSFET
SiRA04DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ( ) (Max.)
0.00215 at VGS = 10 V 30
0.00310 at VGS = 4.5 V
ID (A)a, g 40 40
Qg (Typ.) 22.5 nC
PowerPAK® SO-8
6.15 mm
D 8D
7 D
6 D
5
S 1S
5.15 mm
2 S
3 G
4
Bottom View
Ordering Informati |
Vishay |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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