SGF4の購入情報と機能

SGF15N90D IGBT SGF15N90D General Description Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitab

SGF5N150UF IGBT SGF5N150UF General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGF5N150UF is designed for the Switching Power Supply applications. Features High Speed Switching Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5

Ordering number : EN5820 N-Channel GaAs MESFET SGF25 For C- to X-band local oscillator and amplifier Features Package Dimensions Super miniaturized plastic-mold package(CP4). unit: mm High reliability achieved by original manufacturing 2134A technology(adopting a protection coat). Available

SGF80N60UF October 2001 IGBT SGF80N60UF Ultra-Fast IGBT General Description Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching