SGF15N90Dの購入情報と機能
| この部品の機能は「General Description」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| SGF15N90D Data | General Description SGF15N90D
IGBT
SGF15N90D
General Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitab |
Fairchild Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| SGF23N60UF | Ultra-Fast IGBT SGF23N60UF
October 2001
IGBT
SGF23N60UF
Ultra-Fast IGBT
General Description
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching |
Fairchild Semiconductor |
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| SGF80N60UF | Ultra-Fast IGBT SGF80N60UF
October 2001
IGBT
SGF80N60UF
Ultra-Fast IGBT
General Description
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching |
Fairchild Semiconductor |
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| SGF23N60UFD | Ultra-Fast IGBT SGF23N60UFD
June 2001
IGBT
SGF23N60UFD
Ultra-Fast IGBT
General Description
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching |
Fairchild Semiconductor |
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| SGF9 | For C to X-band Local Oscillator and Amplifier Ordering number : ENN*0000
SGF9
N-Channel GaAs MESFET
SGF9
For C to X-band Local Oscillator and Amplifier
Preliminary Features
Package Dimensions
unit : mm 0000
[SGF9]
3
Mold package-owing to the cross-mold technology, this product can maintain the same performance as the ceramic package |
 Sanyo Semicon Device |
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