P123の購入情報と機能
| この部品の機能は「PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| P123 Transistor | PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM, AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly |
Polyfet RF Devices |
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| P123 Data | PASSIVATED ASSEMBLED CIRCUIT ELEMENTS |
International Rectifier |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| P1202-12 | CbS photoconductive cell |  Hamamatsu Corporation |
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| P12NB30FP | STP12NB30
STP12NB30 STP12NB30FP
N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET
PRELIMINARY DATA TYPE STP3NB60 STP12NB30F P
s s s s s
V DSS 300 V 300 V
R DS(on) < 0.40 Ω < 0.40 Ω
ID 12A 6.5 A
TYPICAL RDS(on) = 0.34 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACI |
 ST Microelectronics |
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| P121 | PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
P121
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM, AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and o |
Polyfet RF Devices |
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| P1241-06 | CdS photoconductive cell VISIBLE DETECTOR
CdS photoconductive cell
Resin coating type (5R type)
Standard type designed for general-purpose, wide application
CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These sensors are non-polar res |
Hamamatsu Corporation |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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