P121の購入情報と機能

この部品の機能は「PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR」です。


製品の詳細 ( データシート PDF )

部品番号 部品情報 メーカー PDF / カテゴリー
P121 TransistorPATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

polyfet rf devices P121 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM, AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and o
Polyfet RF Devices
Polyfet RF Devices
datasheet P121 pdf
P121 DataPASSIVATED ASSEMBLED CIRCUIT ELEMENTS
International Rectifier
International Rectifier
datasheet P121 pdf
datasheet P121 download

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® STP12PF06 P - CHANNEL 60V - 0.18 Ω - 12A TO-220 STripFET™ POWER MOSFET TYPE STP12PF06 s s s s V DSS 60 V R DS(o n) < 0.20 Ω ID 12 A s TYPICAL RDS(on) = 0.18 Ω EXCEPTIONAL dv, dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATIONL 3 1 2 DESCRIPT
datasheet P12PF06 pdf
P122 PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

polyfet rf devices P122 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM, AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and o
datasheet P122 pdf


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