MBRF200150の購入情報と機能

MBRB1035 THRU MBRB1060 SCHOTTKY RECTIFIER Reverse Voltage - 35 to 60 Volts TO-263AB 0.380 (9.65) 0.420 (10.67) 0.245 (6.22) MIN K 0.047 (1.19) 0.055 (1.40) 0.160 (4.06) 0.190 (4.83) 0.045 (1.14) 0.055 (1.40) Forward Current - 10.0 Amperes Plastic package has Underwriters Laboratory Flammability Cl

MBRT20045 thru MBRT200100R Silicon Power Schottky Diode Features High Surge Capability Types up to 100 V VRRM Isolation Type Package Three Tower Package VRRM = 20 V - 100 V IF = 200 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetit

MBRF2035 - MBRF20150 Isolated 20.0 AMPS. Schottky Barrier Rectifiers ITO-220AC .185(4.7) .173(4.4) .124(3.16) .118(3.00) .406(10.3) .390(9.90) .134(3.4)DIA .113(3.0)DIA .112(2.85) .100(2.55) Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon juncti

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRS1540T3, D Advance Information Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide pa