MBRT20060Rの購入情報と機能
| この部品の機能は「Silicon Power Schottky Diode」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| MBR560MFST3G | SWITCHMODE Power Rectifiers MBR560MFS, NRVB560MFS
SWITCHMODE
Power Rectifiers
These state of the art devices have the following features:
Features
Low Power Loss , High Efficiency
New Package Provides Capability of Inspection and Probe After
Board Mounting
Guardring for Stress Protection
Low Forward Voltage Drop
175° |
ON Semiconductor |
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| MBR2100 | SCHOTTKY DIE SPECIFICATION Micro-Electro-Magnetical Tech Co.
SCHOTTKY DIE SPECIFICATION
General Description: 100 V 2 A ( Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage @ 1 Amperes, Ta=25°C @ 2 Ampe |
![]() ETC |
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| MBRS120TR | SCHOTTKY RECTIFIER 1 Amp Bulletin PD-20644 rev. D 03, 03
MBRS120
SCHOTTKY RECTIFIER 1 Amp
SMB
Major Ratings and Characteristics Characteristics
IF(AV) Rectangular waveform VRRM IFSM @ tp= 5 s sine VF TJ @ 1.0Apk, TJ = 125°C range
Description, Features Units
A V A V °C The MBRS120 surface-mount Schottky rectifier has |
![]() International Rectifier |
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| MBRF860 | SCHOTTKY BARRIER RECTIFIER BL
FEATURES
GALAXY ELECTRICAL
MBRF830 - - - MBRF8100
VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A
SCHOTTKY BARRIER RECTIFIER
High s urge capacity. For us e in low voltage, high frequency inverters , free 111wheeling, and polarity protection applications . Metal s ilicon junction, m ajority carrier c |
![]() Galaxy Semi-Conductor Holdings Limited |
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