K4S281632C-TP1Hの購入情報と機能
| この部品の機能は「128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| K4S281632C-TP1H Data | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL K4S281632C-TI(P)
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.1 June 2001
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.1 Jun. 2001
K4S281632C-TI(P)
Revision History
Revision 0.0 (November 18, 2000)
First |
Samsung semiconductor |
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PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| K4S640832F | 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL K4S640832F
CMOS SDRAM
64Mbit SDRAM
2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Revision 1.1 May. 2003
* Samsung Electronics reserves the right to change products or specification without notice.
Rev.1.1 May. 2003
K4S640832F
Revision History Revision 0.0 (June, 2001) Revision 0.1 (Sep., 2001)
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Samsung semiconductor |
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| K4S643232E-TL45 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL K4S643232E
CMOS SDRAM
2M x 32 SDRAM
512K x 32bit x 4 Banks Synchronous DRAM LVTTL
Revision 1.3 October 2001
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.3 (Oct. 2001)
K4S643232E
Revision History
Revision 1.3 (October 24, 2000)
Removed |
Samsung semiconductor |
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| K4S56323LF-FHL | 2M x 32Bit x 4 Banks Mobile SDRAM K4S56323LF - F(H)E, N, S, C, L, R
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
VDD, VDDQ = 2.5V, 2.5V LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type |
Samsung semiconductor |
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| K4S64163LH-RF | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA K4S64163LH - R(B)E, N, G, C, L, F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
2.5V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Seq |
Samsung semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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