K4S640832Fの購入情報と機能
| この部品の機能は「64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| K4S511632M-TL1L | 512Mbit SDRAM K4S511632M
CMOS SDRAM
512Mbit SDRAM
8M x 16bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.3 May. 2002
Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.3 May. 2002
K4S511632M
Revision History
Revision 0.0 (Mar. 2001) Revision 0.1 (Aug. 2001)
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Samsung semiconductor |
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| K4S280832O | 128Mb O-die SDRAM Rev. 1.0, May. 2010 K4S280832O K4S281632O
128Mb O-die SDRAM
54TSOP(II) with Lead-Free & Halogen-Free (RoHS compliant)
datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference pur |
Samsung semiconductor |
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| K4S283233F-N | 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA K4S283233F - F(H)E, N, G, C, L, F
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
3.0V & 3.3V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst ty |
Samsung semiconductor |
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| K4S1G0732B-TC75 | SDRAM stacked 1Gb B-die SDRAM stacked 1Gb B-die (x8)
CMOS SDRAM
stacked 1Gb B-die SDRAM Specification
Revision 1.1 February 2004
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 1.1 February 2004
SDRAM stacked 1Gb B-die (x8)
Revision History
Revision 1.0 (August, 2003) |
Samsung semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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