IRFK6H150の購入情報と機能
| この部品の機能は「ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| IRFK6H150 Data | ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION |
International Rectifier |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| IRFS440B | 500V N-Channel MOSFET IRFS440B
November 2001
IRFS440B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pr |
![]() Fairchild |
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| IRFU9214PBF | HEXFET POWER MOSFET
PD - 95375A
IRFR, U9214PbF
P-Channel Surface Mount (IRFR9214) l Straight Lead (IRFU9214) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
HEXFET® Power MOSFET VDSS = -250V RDS(on) = 3.0Ω
D
G S
ID = -2.7A
Third Generation HEXFETs from Inter |
![]() International Rectifier |
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| IRFP254B | 250V N-Channel MOSFET IRFP254B
November 2001
IRFP254B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pr |
![]() Fairchild |
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| IRFR4615PBF | Power MOSFETs Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
G
IRFR4615PbF
IRFU4615PbF
HEXFET® Power MOSFET
D VDSS
150V
RDS(on) typ.
34m:
max. 42m:
S ID
33A
Benefits l Improved Ga |
![]() International Rectifier |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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