IRFP254Bの購入情報と機能
| この部品の機能は「250V N-Channel MOSFET」です。 |
|
|
製品の詳細 ( データシート PDF )

PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| IRF3805S-7PPbF | Power MOSFET, Transistor IRF3805S-7PPbF IRF3805L-7PPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely |
![]() International Rectifier |
![]() |
| IRF6618 | HEXFET Power MOSFET IRF6618, IRF6618TR1
VDSS
Application Specific MOSFETs Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
l l
PD - 94726D
HEXFET® Power MOSFET
RDS(on) max
2. |
![]() International Rectifier |
![]() |
| IRF3415 | Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A) PD - 91477D
IRF3415
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 150V
G S
RDS(on) = 0.042Ω ID = 43A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanc |
![]() International Rectifier |
![]() |
| IRFU3518PBF | HEXFET Power MOSFET PD - 95510A
IRFR3518PbF IRFU3518PbF
Applications l High frequency DC-DC converters l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage |
![]() International Rectifier |
![]() |
|
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
|
|

