IRF221の購入情報と機能
| この部品の機能は「N-Channel Power MOSFETs」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| IRF221 MOSFET | N-Channel Power MOSFETs Semiconductor
October 1997
IRF220, IRF221, IRF222, IRF223
4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs
Features
4.0A and 5.0A, 150V and 200V rDS(ON) = 0.8Ω and 1.2Ω SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High |
Harris |
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| IRF221 MOSFET | N-Channel MOSFET Transistor |
Inchange Semiconductor |
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| IRF221 MOSFET | N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
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| IRF221 MOSFET | N-CHANNEL POWER MOSFETS |
Samsung semiconductor |
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| IRF221 MOSFET | 4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs |
Intersil Corporation |
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PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| IRFL014N | Power MOSFET, Transistor PD- 92003A
HEXFET® Power MOSFET
l l l l l l
IRFL014N
VDSS = 55V RDS(on) = 0.16Ω
Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv, dt Rating Fast Switching Fully Avalanche Rated
D
G S
ID = 1.9A
Description
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| IRFU1010ZPBF | AUTOMOTIVE MOSFET PD - 95951
AUTOMOTIVE MOSFET
Features
l l l l l l
IRFR1010ZPbF IRFU1010ZPbF
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
VDSS = 55V RDS(on) = 7.5mΩ
Description
Specif |
International Rectifier |
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| IRFC9110 | P-Channel Power MOSFET |
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| IRFPG50 | Power MOSFET, Transistor PD - 9.543C
IRFPG50
HEXFET® Power MOSFET
www.irf.com
1
10, 29, 97
IRFPG50
2
www.irf.com
IRFPG50
www.irf.com
3
IRFPG50
100
OPERATION IN THIS AREA LIMITED BY RDS(on)
10us
I D , Drain Current (A)
10 100us
1ms 1 10ms
0.1
TC = 25 °C TJ = 150 °C Single Pulse
10 100 1000 10000
VDS , Dr |
International Rectifier |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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