IRFPG50の購入情報と機能
| この部品の機能は「Power MOSFET, Transistor」です。 |
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製品の詳細 ( データシート PDF )
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| IRFP3710PBF | Power MOSFET, Transistor l Advanced Process Technology l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. |
![]() International Rectifier |
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| IRFY130C | Power MOSFET, Transistor PD - 91286D
POWER MOSFET THRU-HOLE (TO-257AA)
Product Summary
Part Number
IRFY130C IRFY130CM
IRFY130C,IRFY130CM 100V, N-CHANNEL
HEXFET MOSFET TECHNOLOGY
®
R DS(on)
0.18 Ω 0.18 Ω
ID
14.4A 14.4A
Eyelets
Ceramic Ceramic
HEXFET® MOSFET technology is the key to International
Rectifier’s adv |
![]() International Rectifier |
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| IRFHS8242PBF | HEXFET Power MOSFET VDS VGS max RDS(on) max
(@VGS = 10V)
Qg (typical)
( @ VGS = 4.5V)
ID
(@Tc(Bottom) = 25°C)
Applications
System, Load Switch
25 ±20 13.0
4.3
d8.5
V V mΩ
nC
A
Features and Benefits
Features Low RDSon (≤ 13.0mΩ) Low Thermal Resistance to PCB (≤ 13°C, W) Low Profile (≤ 1.0 mm) Compatible w |
![]() International Rectifier |
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| IRF9910TRPBF-1 | Power MOSFET, Transistor IRF9910TRPbF-1
VDS RDS(on) m ax Q1 (@VGS = 10V) RDS(on) m ax Q2 (@VGS = 10V) Qg (typical) Q1 Qg (typical) Q2
ID(@TA = 25°C)Q1
ID(@TA = 25°C)Q2
20 V
13.4 mΩ
9.3
7.4 15
nC
10
A 12
S2 1 G2 2 S1 3 G1 4
HEXFET® Power MOSFET
8 D2 7 D2 6 D1 5 D1
SO-8
Applications
l Dual SO-8 MOSFET for POL c |
![]() International Rectifier |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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