HAF70009の購入情報と機能
| この部品の機能は「56A/ 100V/ 0.025 Ohm/ N-Channel UltraFET Power MOSFET」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| HAF2012L | Silicon N Channel MOS FET Series Power Switching
HAF2012(L), HAF2012(S)
Silicon N Channel MOS FET Series Power Switching
REJ03G1139-0400 Rev.4.00 Jul 13, 2007
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And |
![]() Renesas Technology |
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| HAF1008S | Silicon P Channel MOS FET Series Power Switching HAF1008(L), HAF1008(S)
Silicon P Channel MOS FET Series Power Switching
REJ03G0027-0100Z Rev.1.00
May.13.2003
Description
This FET has the over temperature shut down capability sensing to the junction temperature. This FET has the built in over temperature shut down circuit in the gate area. And thi |
![]() Renesas |
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| HAF2011 | Silicon N Channel MOS FET Series Power Switching HAF2011(L),HAF2011(S)
Silicon N Channel MOS FET Series Power Switching
Target specification ADE-208-738 (Z) 1st. Edition Jan. 1999 Features
This FET has the over temperature shut down capability sensing to the junction temperature. This FET has the built in over temperature shut down circuit in the |
Hitachi Semiconductor |
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| HAF1002L | Silicon P Channel MOS FET Series Power Switching HAF1002(L), HAF1002(S)
Silicon P Channel MOS FET Series Power Switching
ADE-208-586 (Z) 1st. Edition October 1997 Features
This FET has the over temperature shut down capability sensing to the junction temperature. This FET has the built in over temperature shut down circuit in the gate area. And t |
Hitachi Semiconductor |
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