HAF2012Lの購入情報と機能
| この部品の機能は「Silicon N Channel MOS FET Series Power Switching」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| HAF2027 | Silicon N-Channel Power MOSFET Power Switching HAF2027(L), HAF2027(S)
Silicon N Channel Power MOS FET Power Switching
REJ03G1674-0100 Rev.1.00 May 19, 2008
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And thi |
![]() Renesas Technology |
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| HAF1009 | Silicon P Channel MOS FET Series Power Switching
HAF1009(L), HAF1009(S)
Silicon P Channel MOS FET Series Power Switching
REJ03G0029-0100Z (Previous ADE-208-1525 (Z)) Rev.1.00 May.13.2003
Description
This FET has the over temperature shut down capability sensing to the junction temperature. This FET has the built in over temperature shut down ci |
![]() Renesas Technology |
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| HAF2011L | Silicon N Channel MOS FET Series Power Switching HAF2011(L),HAF2011(S)
Silicon N Channel MOS FET Series Power Switching
Target specification ADE-208-738 (Z) 1st. Edition Jan. 1999 Features
This FET has the over temperature shut down capability sensing to the junction temperature. This FET has the built in over temperature shut down circuit in the |
Hitachi Semiconductor |
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| HAF2021 | Silicon N Channel MOSFET Series Power Switching HAF2021(L), HAF2021(S)
Silicon N Channel MOS FET Series Power Switching
REJ03G0179-0200Z (Previous ADE-208-1459A(Z)) Rev.2.00 Mar.05.2004
Description
This FET has the over temperature shut down capability sensing to the junction temperature. This FET has the built in over temperature shut down circ |
![]() Renesas Technology |
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