FMB3904の購入情報と機能
| この部品の機能は「NPN General Purpose Amplifier」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FMBM5551 | NPN General Purpose Amplifier FMBM5551 NPN General Purpose Amplifier
April 2005
FMBM5551
NPN General Purpose Amplifier
This device has matched dies Sourced from process 16. See MMBT5551 for characteristics
E1 C1
C2
B2 E2 pin #1 B1
Mark: .3S2 Dot denotes pin #1
SuperSOTTM-6
Absolute Maximum Ratings *
Symbol
VCEO VCBO |
Fairchild Semiconductor |
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| FMB-G19 | Schottky Barrier Diodes 90V Schottky Barrier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50H- Half-cycle Sinewave Single Shot
90V
Electrical Characteristics (Ta = 25°C) Others Rth ( j-c) Mass Remarks Fig. (°C, W) (g) 1 Chip A IF (A) IR (mA) VR = VRM IR (H) (mA) VR=VRM, Ta=100°C
Tj (° |
![]() Sanken electric |
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| FMB100 | NPN Multi-Chip General Purpose Amplifier FMB100
Discrete POWER & Signal Technologies
FMB100
C2 E1 C1
B2 E2
pin #1 B1
SuperSOT™-6
Mark: .NA
NPN Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10.
Absolute Maximum Ratings*
Sy |
Fairchild Semiconductor |
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| FMB-24H | Schottky Barrier Diodes 40V Schottky Barrier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50H- Half-cycle Sinewave Single Shot
40V
Electrical Characteristics (Ta = 25°C) Others Rth ( j-c) (°C, W) Mass Fig. (g) IF (A) IR (mA) VR = VRM IR (H) (mA) VR=VRM, Ta=100°C
Tj (°C)
Tstg (°C)
ma |
![]() Sanken electric |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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