FDMS86322の購入情報と機能
| この部品の機能は「N-Channel MOSFET」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FDMA8878 | Single N-Channel PowerTrench MOSFET FDMA8878 Single N-Channel Power Trench® MOSFET
May 2012
FDMA8878
Single N-Channel Power Trench® MOSFET
30 V, 9.0 A, 16 mΩ
Features
Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 9.0 A Max rDS(on) = 19 mΩ at VGS = 4.5 V, ID = 8.5 A High performance trench technology for extremely low rDS(on) Fast |
Fairchild Semiconductor |
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| FDMA1028NZ | Dual N-Channel PowerTrench MOSFET
FDMA1028NZ Dual N-Channel PowerTrench® MOSFET
May 2006
FDMA1028NZ
Dual N-Channel PowerTrench® MOSFET
General Description
This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two |
Fairchild Semiconductor |
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| FDMS3572 | N-Channel UltraFET Trench MOSFET
FDMS3572 N-Channel UltraFET Trench® MOSFET
November 2006
FDMS3572 N-Channel UltraFET Trench® MOSFET
80V, 22A, 16.5mΩ Features General Description
Max rDS(on) = 16.5mΩ at VGS = 10V, ID = 8.8A Max rDS(on) = 24mΩ at VGS = 6V, ID = 8.4A Typ Qg = 28nC at VGS = 10V Low Miller Charge Optim |
Fairchild Semiconductor |
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| FDMC8554 | N-Channel Power Trench MOSFET FDMC8554 N-Channel PowerTrench® MOSFET
February 2007
FDMC8554 N-Channel Power Trench® MOSFET
20V, 16.5A, 5mΩ Features General Description
Max rDS(on) = 5mΩ at VGS = 10V, ID = 16.5A Max rDS(on) = 6.4mΩ at VGS = 4.5V, ID = 14A Low Profile - 1mm max in a MicroFET 3.3x3.3 mm RoHS Compliant |
Fairchild Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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