FDMC8554の購入情報と機能
| この部品の機能は「N-Channel Power Trench MOSFET」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| FDMC8554 MOSFET | N-Channel Power Trench MOSFET FDMC8554 N-Channel PowerTrench® MOSFET
February 2007
FDMC8554 N-Channel Power Trench® MOSFET
20V, 16.5A, 5mΩ Features General Description
Max rDS(on) = 5mΩ at VGS = 10V, ID = 16.5A Max rDS(on) = 6.4mΩ at VGS = 4.5V, ID = 14A Low Profile - 1mm max in a MicroFET 3.3x3.3 mm RoHS Compliant |
Fairchild Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FDMF6821B | High-Frequency DrMOS Module FDMF6821B Extra-Small, High-Performance, High-Frequency DrMOS Module
October 2012
FDMF6821B Extra-Small, High-Performance, High-Frequency DrMOS Module
Benefits
Ultra-Compact 6x6 mm PQFN, 72% Space-Saving Compared to Conventional Discrete Solutions Fully Optimized System Eff |
Fairchild Semiconductor |
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| FDMC2523P | P-Channel QFET
FDMC2523P P-Channel QFET®
September 2006
FDMC2523P P-Channel QFET®
-150V, -3A, 1.5:
Features
Low Crss ( typical 10pF) Fast Switching Low gate charge ( typical 6.2 nC ) Improved dv , dt capability RoHS compliant
tm
General Description
These P-Channel MOSFET enhancement mode power field |
Fairchild Semiconductor |
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| FDME1034CZT | Complementary PowerTrench MOSFET
FDME1034CZT Complementary PowerTrench® MOSFET
December 2009
FDME1034CZT
Complementary PowerTrench® MOSFET
N-channel: 20 V, 3.4 A, 66 mΩ P-channel: -20 V, -2.3 A, 142 mΩ Features General Description
Q1: N-Channel Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A Max rDS(on) = 86 mΩ |
Fairchild Semiconductor |
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| FDMC86260 | N-Channel Power Trench MOSFET FDMC86260 N-Channel Power Trench® MOSFET
FDMC86260
N-Channel Power Trench® MOSFET
150 V, 16 A, 34 mΩ
December 2012
Features
General Description
Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4.8 A High performance technology for extremely low rDS(on |
Fairchild Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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