FDMC86260の購入情報と機能
| この部品の機能は「N-Channel Power Trench MOSFET」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
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| FDMC8360L | N-Channel Shielded Gate Power Trench MOSFET FDMC8360L N-Channel Shielded Gate Power Trench® MOSFET
June 2013
FDMC8360L
N-Channel Shielded Gate Power Trench® MOSFET
40 V, 80 A, 2.1 mΩ
Features
Shielded Gate MOSFET Technology Max rDS(on) = 2.1 mΩ at VGS = 10 V, ID = 27 A Max rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A High performance |
Fairchild Semiconductor |
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| FDMQ8403 | N-Channel PowerTrench MOSFET FDMQ8403 N-Channel PowerTrench® MOSFET
FDMQ8403
July 2012
GreenBridgeTM Series of High-Efficiency Bridge Rectifiers N-Channel PowerTrench® MOSFET
100 V, 6 A, 110 mΩ
Features
General Description
Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A S |
Fairchild Semiconductor |
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| FDMF6706C | High-Frequency DrMOS Module FDMF6706C - Extra-Small High-Performance, High-Frequency DrMOS Module
March 2012
FDMF6706C Extra-Small, High-Performance, HighFrequency DrMOS Module
Benefits
Ultra-Compact 6x6mm PQFN, 72% Space-Saving Compared to Conventional Discrete Solutions Fully Optimized System Effic |
Fairchild Semiconductor |
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| FDMB2307NZ | Dual Common Drain N-Channel PowerTrench MOSFET
FDMB2307NZ Dual Common Drain N-Channel PowerTrench® MOSFET
FDMB2307NZ
Dual Common Drain N-Channel PowerTrench® MOSFET
20 V, 9.7 A, 16.5 mΩ
Features
Max rS1S2(on) = 16.5 mΩ at VGS = 4.5 V, ID = 8 A Max rS1S2(on) = 18 mΩ at VGS = 4.2 V, ID = 7.4 A Max rS1S2(on) = 21 mΩ at VGS = 3.1 V, ID = |
Fairchild Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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