FDMC8360Lの購入情報と機能
| この部品の機能は「N-Channel Shielded Gate Power Trench MOSFET」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FDMS86520L | N-Channel MOSFET FDMS86520L N-Channel PowerTrench® MOSFET
April 2011
FDMS86520L
N-Channel PowerTrench® MOSFET
60 V, 22 A, 8.2 mΩ Features General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC, DC converters using eith |
Fairchild Semiconductor |
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| FDMS7558S | N-Channel PowerTrench SyncFET FDMS7558S N-Channel PowerTrench®SyncFET
December 2009
FDMS7558S
N-Channel PowerTrench® SyncFETTM
25 V, 49 A, 1.25 mΩ
Features
Max rDS(on) = 1.25 mΩ at VGS = 10 V, ID = 32 A Max rDS(on) = 1.75 mΩ at VGS = 4.5 V, ID = 28 A Advanced Package and Silicon combination for low rDS(on) and high |
Fairchild Semiconductor |
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| FDMS8670 | N-Channel Power Trench MOSFET FDMS8670 N-Channel Power Trench® MOSFET
May 2009
FDMS8670
N-Channel Power Trench® MOSFET
30V, 42A, 2.6m:
tm
Features
General Description
Max rDS(on) = 2.6m: at VGS = 10V, ID = 24A Max rDS(on) = 3.8m: at VGS = 4.5V, ID = 18A 100% UIL Tested RoHS Compliant
This N-Channel MOSFET is produce |
Fairchild Semiconductor |
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| FDMS7606 | Dual N-Channel PowerTrench MOSFET FDMS7606 Dual N-Channel PowerTrench® MOSFET
May 2011
FDMS7606
Dual N-Channel PowerTrench® MOSFET
Q1: 30 V, 12 A, 11.4 mΩ Q2: 30 V, 22 A, 11.6 mΩ
Features
General Description
Q1: N-Channel Max rDS(on) = 11.4 mΩ at VGS = 10 V, ID = 11.5 A Max rDS(on) = 15.7 mΩ at VGS = 4.5 V, ID = 10 A
Q2 |
Fairchild Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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