FDMS86320の購入情報と機能
| この部品の機能は「N-Channel MOSFET」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| FDMS86320 MOSFET | N-Channel MOSFET FDMS86320 N-Channel PowerTrench® MOSFET
December 2011
FDMS86320
N-Channel PowerTrench® MOSFET
80 V, 22 A, 11.7 mΩ Features General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC, DC converters using ei |
Fairchild Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FDMA1023PZ | Dual P-Channel PowerTrench MOSFET FDMA1023PZ Dual P-Channel PowerTrench® MOSFET
March 2007
FDMA1023PZ
20V, 3.7A, 72mΩ Features
Dual P-Channel PowerTrench® MOSFET
General Description
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable appl |
Fairchild Semiconductor |
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| FDMS2734 | N-Channel UltraFET Trench MOSFET FDMS2734 N-Channel UltraFET Trench® MOSFET
February 2007
FDMS2734 N-Channel UltraFET Trench® MOSFET
250V, 14A, 122mΩ Features General Description
UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low tota |
Fairchild Semiconductor |
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| FDMC8321L | N-Channel Power Trench MOSFET FDMC8321L N-Channel PowerTrench® MOSFET
February 2013
FDMC8321L
N-Channel Power Trench® MOSFET
40 V, 49 A, 2.5 mΩ
Features
Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 22 A Max rDS(on) = 4.1 mΩ at VGS = 4.5 V, ID = 18 A Advanced Package and Silicon combination for low rDS(on)
and hign efficie |
Fairchild Semiconductor |
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| FDMJ1028N | N-Channel 2.5V Specified PowerTrench MOSFET FDMJ1028N N-Channel 2.5V Specified PowerTrench® MOSFET
June 2006
FDMJ1028N N-Channel 2.5V Specified PowerTrench® MOSFET
20V, 3.2A, 90mΩ
tm
Features
General Description
Max rDS(on) = 90mΩ at VGS = 4.5V Max rDS(on) = 130mΩ at VGS = 2.5V Low gate charge
High performance trench technol |
Fairchild Semiconductor |
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