FDMS2734の購入情報と機能
| この部品の機能は「N-Channel UltraFET Trench MOSFET」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| FDMS2734 MOSFET | N-Channel UltraFET Trench MOSFET FDMS2734 N-Channel UltraFET Trench® MOSFET
February 2007
FDMS2734 N-Channel UltraFET Trench® MOSFET
250V, 14A, 122mΩ Features General Description
UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low tota |
Fairchild Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FDMS86310 | N-Channel MOSFET FDMS86310 N-Channel PowerTrench® MOSFET
FDMS86310
January 2012
N-Channel PowerTrench® MOSFET
80 V, 50 A, 4.8 mΩ Features General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC, DC converters using eit |
Fairchild Semiconductor |
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| FDMS7670AS | N-Channel MOSFET FDMS7670AS N-Channel PowerTrench® SyncFETTM
September 2009
FDMS7670AS
N-Channel PowerTrench® SyncFETTM
30 V, 42 A, 3 mΩ Features General Description
The FDMS7670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have b |
Fairchild Semiconductor |
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| FDMS86500DC | N-Channel MOSFET FDMS86500DC N-Channel Dual CoolTM Power Trench® MOSFET
November 2012
FDMS86500DC
N-Channel Dual CoolTM Power Trench® MOSFET
60 V, 108 A, 2.3 mΩ
Features
Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 2.3 mΩ at VGS = 10 V, ID = 29 A Max rDS(on) = 3.3 mΩ at VGS = 8 V, ID = 24 A Hig |
Fairchild Semiconductor |
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| FDMS86104 | N-Channel MOSFET FDMS86104 N-Channel PowerTrench® MOSFET
October 2012
FDMS86104
N-Channel PowerTrench® MOSFET
100 V, 16 A, 24 mΩ Features General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on- |
Fairchild Semiconductor |
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