FDMS86104の購入情報と機能

FDMS7650 N-Channel PowerTrench® MOSFET February 2016 FDMS7650 N-Channel PowerTrench® MOSFET 30 V, 267 A, 0.99 mΩ Features General Description Max rDS(on) = 0.99 mΩ at VGS = 10 V, ID = 36 A Max rDS(on) = 1.55 mΩ at VGS = 4.5 V, ID = 32 A Advanced Package and Silicon Combination for Low r

FDMS8888 N-Channel PowerTrench® MOSFET July 2011 FDMS8888 NNNN N-Channel PowerTrench® MOSFET 30 V, 21 A, 9.5 m: Features General Description Max rDS(on) = 9.5 m: at VGS = 10 V, ID = 13.5 A Max rDS(on) = 14.5 m: at VGS = 4.5 V, ID = 10.9 A Advanced Package and Silicon combination for low

FDMS86322 N-Channel PowerTrench® MOSFET October 2010 FDMS86322 N-Channel PowerTrench® MOSFET 80 V, 60 A, 7.65 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-

FDMS7672 N-Channel PowerTrench® MOSFET April 2009 FDMS7672 N-Channel PowerTrench® MOSFET 30 V, 5.0 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC, DC converters using either synchr