FDMS3664Sの購入情報と機能
| この部品の機能は「MOSFET, Transistor」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| FDMS3664S MOSFET | MOSFET, Transistor FDMS3664S PowerTrench® Power Stage
FDMS3664S
PowerTrench® Power Stage
January 2015
Asymmetric Dual N-Channel MOSFET
Features
General Description
Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A
Q2: N-Channel Max rDS(on) = 2.6 mΩ at |
Fairchild Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FDMS6681Z | P-Channel PowerTrench MOSFET
FDMS6681Z P-Channel PowerTrench® MOSFET
May 2009
FDMS6681Z
P-Channel PowerTrench® MOSFET
-30 V, -49 A, 3.2 m: Features
Max rDS(on) = 3.2 m: at VGS = -10 V, ID = -21.1 A Max rDS(on) = 5.0 m: at VGS = -4.5 V, ID = -15.7 A Advanced Package and Silicon combination for low rDS(on) HBM ESD prote |
Fairchild Semiconductor |
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| FDMS8660S | N-Channel PowerTrench SyncFET
FDMS8660S N-Channel PowerTrench® SyncFETTM
August 2006
FDMS8660S N-Channel PowerTrench® SyncFETTM
30V, 40A, 2.4mΩ Features General Description
Max rDS(on) = 2.4mΩ at VGS = 10V, ID = 25A Max rDS(on) = 3.5mΩ at VGS = 4.5V, ID = 21A Advanced Package and Silicon combination for low RDS(ON |
Fairchild Semiconductor |
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| FDMS86201 | N-Channel MOSFET Preliminary Datasheet
FDMS86201 N-Channel PowerTrench® MOSFET
April 2010
FDMS86201
N-Channel PowerTrench® MOSFET
120 V, 35 A, 11.5 m: Features General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailore |
Fairchild Semiconductor |
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| FDMS7600AS | Dual N-Channel PowerTrench MOSFET FDMS7600AS Dual N-Channel PowerTrench® MOSFET
December 2009
FDMS7600AS
Dual N-Channel PowerTrench® MOSFET
Features
Q1: N-Channel Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 12 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 20 A Max |
Fairchild Semiconductor |
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