FDMS6681Zの購入情報と機能
| この部品の機能は「P-Channel PowerTrench MOSFET」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| FDMS6681Z MOSFET | P-Channel PowerTrench MOSFET
FDMS6681Z P-Channel PowerTrench® MOSFET
May 2009
FDMS6681Z
P-Channel PowerTrench® MOSFET
-30 V, -49 A, 3.2 m: Features
Max rDS(on) = 3.2 m: at VGS = -10 V, ID = -21.1 A Max rDS(on) = 5.0 m: at VGS = -4.5 V, ID = -15.7 A Advanced Package and Silicon combination for low rDS(on) HBM ESD prote |
Fairchild Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FDMS86568_F085 | MOSFET, Transistor FDMS86568_F085 N-Channel PowerTrench® MOSFET
FDMS86568_F085
N-Channel PowerTrench® MOSFET
60 V, 80 A, 3.5 mΩ
December 2014
Features
Typical RDS(on) = 2.6 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 55 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101
Applica |
Fairchild Semiconductor |
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| FDMS86200 | N-Channel MOSFET FDMS86200 N-Channel Power Trench® MOSFET
November 2012
FDMS86200
N-Channel Power Trench® MOSFET
150 V, 49 A, 18 mΩ
Features
Max rDS(on) = 18 mΩ at VGS = 10 V, ID = 9.6 A Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 8.8 A Advanced Package and Silicon combination for low rDS(on) and high efficienc |
Fairchild Semiconductor |
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| FDMS7578 | N-Channel Power Trench MOSFET FDMS7578 N-Channel Power Trench® MOSFET
December 2009
FDMS7578
N-Channel Power Trench® MOSFET
25 V, 5.8 mΩ
Features
Max rDS(on) = 5.8 mΩ at VGS = 10 V, ID = 17 A Max rDS(on) = 8 mΩ at VGS = 4.5 V, ID = 14 A Advanced Package and Silicon combination for low rDS(on) and high efficiency Ne |
Fairchild Semiconductor |
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| FDMS8672S | N-Channel PowerTrench SyncFET FDMS8672S N-Channel PowerTrench® SyncFETTM
February 2007
FDMS8672S N-Channel PowerTrench® SyncFETTM
30V, 35A, 5mΩ Features General Description
Max rDS(on) = 5.0mΩ at VGS = 10V, ID = 17A Max rDS(on) = 7.0mΩ at VGS = 4.5V, ID = 15A Advanced Package and Silicon combination for low rDS(on) |
Fairchild Semiconductor |
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