FDMS3604ASの購入情報と機能
| この部品の機能は「MOSFET, Transistor」です。 |
|
|
製品の詳細 ( データシート PDF )

PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FDMF6824C | High-Frequency DrMOS Module FDMF6824C Extra-Small, High-Performance, High-Frequency DrMOS Module
May 2013
FDMF6824C Extra-Small, High-Performance, High-Frequency DrMOS Module
Benefits
Ultra-Compact 6x6 mm PQFN, 72% Space-Saving Compared to Conventional Discrete Solutions Fully Optimized System Efficie |
Fairchild Semiconductor |
![]() |
| FDMC5614P | P-Channel PowerTrench MOSFET
FDMC5614P 60V P-Channel PowerTrench® MOSFET
March 2006
FDMC5614P P-Channel PowerTrench® MOSFET
60V, 5.7A, 100mΩ General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced Power Trench process. It has been optimized for power management applicatio |
Fairchild Semiconductor |
![]() |
| FDMF3030 | DrMOS Module FDMF3030 Extra-Small, High-Performance, High-Frequency DrMOS Module
September 2012
FDMF3030 Extra-Small, High-Performance, High-Frequency, DrMOS Module
Benefits
Ultra-Compact 6x6mm PQFN, 72% Space-Saving Compared to Conventional Discrete Solutions Fully Optimized for System |
Fairchild Semiconductor |
![]() |
| FDMA1024NZ | Dual N-Channel PowerTrench MOSFET FDMA1024NZ Dual N-Channel Power Trench® MOSFET
May 2009
FDMA1024NZ
Dual N-Channel PowerTrench® MOSFET
20 V, 5.0 A, 54 mΩ Features
Max rDS(on) = 54 mΩ at VGS = 4.5 V, ID = 5.0 A Max rDS(on) = 66 mΩ at VGS = 2.5 V, ID = 4.2 A Max rDS(on) = 82 mΩ at VGS = 1.8 V, ID = 2.3 A Max rDS(on) |
Fairchild Semiconductor |
![]() |
|
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
|
|
