FDMF3030の購入情報と機能
| この部品の機能は「DrMOS Module」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| FDMF3030 Data | DrMOS Module FDMF3030 Extra-Small, High-Performance, High-Frequency DrMOS Module
September 2012
FDMF3030 Extra-Small, High-Performance, High-Frequency, DrMOS Module
Benefits
Ultra-Compact 6x6mm PQFN, 72% Space-Saving Compared to Conventional Discrete Solutions Fully Optimized for System |
Fairchild Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| FDMS86150 | N-Channel MOSFET FDMS86150 N-Channel PowerTrench® MOSFET
October 2012
FDMS86150
N-Channel PowerTrench® MOSFET
100 V, 60 A, 4.85 mΩ Features General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the o |
Fairchild Semiconductor |
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| FDMS8662 | N-Channel PowerTrench MOSFET
FDMS8662 N-Channel PowerTrench® MOSFET
November 2007
FDMS8662
N-Channel PowerTrench MOSFET
30V, 49A, 2.0mΩ
Features
Max rDS(on) = 2.0mΩ at VGS = 10V, ID = 28A Max rDS(on) = 3.0mΩ at VGS = 4.5V, ID = 24A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 |
Fairchild Semiconductor |
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| FDMS7602S | Dual N-Channel PowerTrench MOSFET FDMS7602S Dual N-Channel PowerTrench® MOSFET
May 2014
FDMS7602S
Dual N-Channel PowerTrench® MOSFET
Q1: 30 V, 30 A, 7.5 mΩ Q2: 30 V, 30 A, 5.0 mΩ
Features
General Description
Q1: N-Channel Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 12 mΩ at VGS = 4.5 V, ID = 10 A
Q2: N-C |
Fairchild Semiconductor |
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| FDMS8690 | N-Channel PowerTrench MOSFET
FDMS8690 N-Channel PowerTrench® MOSFET
March 2006
FDMS8690
N-Channel PowerTrench® MOSFET
30V, 19.8A, 9mΩ
General Description
This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various components of gate |
Fairchild Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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