D2002の購入情報と機能
| この部品の機能は「METAL GATE RF SILICON FET」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| D2002 Gate | METAL GATE RF SILICON FET TetraFET
D2002UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W 28V 1GH- SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS C |
Seme LAB |
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PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| D2045 | NPN Transistor, 2SD2045 Darlington
sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2045 120 120 6 6(Pulse10) 1 50(Tc=25°C) 150 55 to +150
2SD2045
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=2V, IC=3A IC=3A, IB=3mA IC=3A, IB |
 Sanken electric |
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| D2017M | FTD2017M Ordering number : ENA1176
FTD2017M
SANYO Semiconductors
DATA SHEET
FTD2017M
Features
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Low ON-resistance. 2.5V drive. Mount height 1.1mm. Composite type, facilitating high-density mounting. Drain common specifications. |
 Sanyo Semicon Device |
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| D2001UK | METAL GATE RF SILICON FET TetraFET
D2001UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W 28V 1GH- SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS |
Seme LAB |
|
| D2020UK.02 | METAL GATE RF SILICON FET S a MECHANICAL at DATA .D w w w
A
e e h
U 4 t
m o .c
TetraFET
D2020UK.02
METAL GATE RF SILICON FET
N
8 7 6 5
1 2
C B P
D
3 4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W 28V 1GH- SINGLE ENDED
FEATURES
H
K
L J E F G
M
SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APP |
Seme LAB |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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