D2017Mの購入情報と機能
| この部品の機能は「 FTD2017M」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| D2017M Data | FTD2017M Ordering number : ENA1176
FTD2017M
SANYO Semiconductors
DATA SHEET
FTD2017M
Features
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Low ON-resistance. 2.5V drive. Mount height 1.1mm. Composite type, facilitating high-density mounting. Drain common specifications. |
Sanyo Semicon Device |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| D2024UK | METAL GATE RF SILICON FET TetraFET
D2024UK
METAL GATE RF SILICON FET
MECHANICAL DATA
Dimensions in mm.
A N
8
D
1 2
C B P
7 6 5
3 4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W 28V 1GH- SINGLE ENDED
FEATURES
H
K
L J E F G
M
SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS VERY LOW Crss |
 Seme LAB |
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| D2008UK | METAL GATE RF SILICON FET TetraFET
D2008UK
METAL GATE RF SILICON FET
MECHANICAL DATA
8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335)
4.19 (0.165) 4.95 (0.195)
12.70 (0.500) min.
0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia.
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W 28V 400MH- SINGLE ENDED
FEATURES
5.0 |
Seme LAB |
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| D2084UK.01 | TetraFET 100W - 28V - 900MHz D2084UK.01
MECHANICAL DATA
C (2 pls)
B
G (typ)
2 1
H D
3
P (2 pls) A
5
4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W 28V 1GH- PUSH PULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS
E (4 pls) F I
N
M
O
J
K
DIM A B C D E F G H I J K M N O P
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Seme LAB |
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| D2030 | METAL GATE RF SILICON FET D2030UK, GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET HF, VHF, UHF COMMUNICATIONS from 1 MH- to 1 GHz |
Seme LAB |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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