C3689の購入情報と機能
| この部品の機能は「NPN Transistor, 2SC3689」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| C3606 | NPN Transistor, 2SC3606 VHF~UHF Band Low Noise Amplifier Applications |
![]() Toshiba |
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| C3669 | NPN Transistor, 2SC3669 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3669
Power Amplifier Applications Power Switching Applications
2SC3669
Unit: mm
Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching: tstg = 1.0 μs (typ.) Complementary to 2SA1429
Absolute Maxi |
![]() Toshiba |
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| C3679 | NPN Transistor, 2SC3679
2SC3679
Application : Switching Regulator and General Purpose
(Ta=25°C) 2SC3679 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 75typ V MH- pF
5.45±0.1 B C E 20.0min 4.0max
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) sAbsolute maximum ratings
Symbol VCBO V |
![]() Sanken electric |
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| C3637 | NPN Transistor, 2SC3637 Ordering number:EN1615C
NPN Triple Diffused Planar Silicon Transistor
2SC3637
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High reliability (Adoption of HVP process). · Fast speed. · High breakdown voltage. · Adoption of MBIT process.
Package Dimension |
![]() Sanyo |
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