C3669の購入情報と機能
| この部品の機能は「NPN Transistor, 2SC3669」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
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| C3669 Transistor | NPN Transistor, 2SC3669 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3669
Power Amplifier Applications Power Switching Applications
2SC3669
Unit: mm
Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching: tstg = 1.0 μs (typ.) Complementary to 2SA1429
Absolute Maxi |
Toshiba |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| C3694 | NPN Transistor, 2SC3694 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3694
DESCRIPTION With TO-220Fa package Large current ,high speed Low saturation voltage APPLICATIONS For use in drivers such as DC-DC converters and actuators.
PINNING PIN DESCRIPTION 1 2 3 Base Collector Emitter
Abso |
 Inchange Semiconductor |
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| C3647 | NPN Transistor, 2SC3647 Ordering number : EN2006D
2SA1417 , 2SC3647
SANYO Semiconductors
DATA SHEET
2SA1417, 2SC3647 PNP , NPN Epitaxial Planar Silicon Transistor
High-Voltage Switching Applications
Features
Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ult |
 Sanyo |
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| C3657 | NPN Transistor, 2SC3657 |  Toshiba Semiconductor |
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| C3615 | NPN Transistor, 2SC3615 |  NEC |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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