BFS19の購入情報と機能
| この部品の機能は「NPN medium frequency transistor」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
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| BFS380L6 | NPN Silicon RF Transistor BFS380L6
NPN Silicon RF Transistor Preliminary data
High current capability and low figure for
4 5 6 1 2 3
wide dynamic range application
Low voltage operation Ideal for low phase noise oscillators up to 3.5 GH- Low noise figure: 1.1 dB at 1.8 GH- Built in 2 transistors ( TR1, TR2: die as BFR |
![]() Infineon Technologies AG |
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| BFS520 | NPN 9 GHz wideband transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BFS520 NPN 9 GH- wideband transistor
Product speci cation File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product speci cation
NPN 9 GH- wideband transistor
FEATURES High power gain Low noise figure High transition frequency |
NXP Semiconductors |
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| BFS17AR | Silicon NPN Planar RF Transistor BFS17A, BFS17AR, BFS17AW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
Wide band, low noise, small signal amplifiers up to UHF frquencies, high speed logic applications and oscillator applications.
Features
D Low |
![]() Vishay Telefunken |
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| BFS17S | NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) BFS 17S
NPN Silicon RF Transistor For broadband amplifiers up to 1GH- at collector currents from 1mA to 20mA
Tape loading orientation
Type BFS 17S
Marking Ordering Code MCs Q62702-F1645
Pin Configuration
Package
1, 4=B1, B2 2, 5=E1, E2 3, 6=C2, C1 SOT-363
Maximum Ratings of any single Transi |
Siemens Semiconductor Group |
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