BFS17Sの購入情報と機能
| この部品の機能は「RF TRANSISTOR」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| BFS17S Transistor | RF TRANSISTOR BFS17,S
CASE 318-02, 03, STYLE 6
SOT-23 (TO-236AA, AB)
RF TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage
Symbol vCEO vCBO
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation, T, \ = 25°C Derate above 25°C
Symbol PD
Storage Tempera |
Motorola Semiconductors |
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| BFS17S Transistor | NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) |
Siemens Semiconductor Group |
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| BFS17S Transistor | NPN Silicon RF Transistor |
Infineon Technologies AG |
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PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| BFS17LT1 | RF TRANSISTOR NPN SILICON MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BFS17LT1, D
The RF Line
NPN Silicon High-Frequency Transistor
Designed primarily for use in high gain, low noise amplifier, oscillator and mixer applications. Packaged for thick or thin film circuits using surface mount components. T1 |
 Motorola Inc |
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| BFS19R | npn silicon rf transistor | Siemens Semiconductor Group |
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| BFS380L6 | NPN Silicon RF Transistor BFS380L6
NPN Silicon RF Transistor Preliminary data
High current capability and low figure for
4 5 6 1 2 3
wide dynamic range application
Low voltage operation Ideal for low phase noise oscillators up to 3.5 GH- Low noise figure: 1.1 dB at 1.8 GH- Built in 2 transistors ( TR1, TR2: die as BFR |
Infineon Technologies AG |
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| BFS520 | NPN 9 GHz wideband transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BFS520 NPN 9 GH- wideband transistor
Product speci cation File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product speci cation
NPN 9 GH- wideband transistor
FEATURES High power gain Low noise figure High transition frequency |
 NXP Semiconductors |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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