BFS17Aの購入情報と機能
| この部品の機能は「NPN 3 GHz wideband transistor」です。 |
|
|
製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| BFS17A Transistor | NPN 3 GHz wideband transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BFS17A NPN 3 GH- wideband transistor
Product speci cation File under Discrete Semiconductors, SC14 September1995
Philips Semiconductors
Product speci cation
NPN 3 GH- wideband transistor
DESCRIPTION NPN transistor in a plastic SOT23 package.
handbook, halfpage |
NXP Semiconductors |
|
| BFS17A Transistor | Silicon NPN Planar RF Transistor |
Vishay Telefunken |
|
PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| BFS17AR | Silicon NPN Planar RF Transistor BFS17A, BFS17AR, BFS17AW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
Wide band, low noise, small signal amplifiers up to UHF frquencies, high speed logic applications and oscillator applications.
Features
D Low |
Vishay Telefunken |
|
| BFS17S | NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) BFS 17S
NPN Silicon RF Transistor For broadband amplifiers up to 1GH- at collector currents from 1mA to 20mA
Tape loading orientation
Type BFS 17S
Marking Ordering Code MCs Q62702-F1645
Pin Configuration
Package
1, 4=B1, B2 2, 5=E1, E2 3, 6=C2, C1 SOT-363
Maximum Ratings of any single Transi |
 Siemens Semiconductor Group |
|
| BFS20W | NPN medium frequency transistor DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BFS20W NPN medium frequency transistor
Product speci cation 1999 Apr 21
Philips Semiconductors
Product speci cation
NPN medium frequency transistor
FEATURES Low current (max. 25 mA) Low voltage (max. 20 V). Very low feedback capacitan |
NXP Semiconductors |
|
| BFS480 | NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems) BFS 480
NPN Silicon RF Transistor For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA fT = 7GHz
F = 1.5dB at 900MHz
Two (galvanic) internal isolated Transistors in one package
ESD: Electrostatic discharge sensit |
Siemens Semiconductor Group |
|
|
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
|
|