BFR31の購入情報と機能
| この部品の機能は「JFET」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| BFR31 Data | JFET BFR30,31
MAXIMUM RATINGS
Rating Drain-Source Voltage Gate-Source Voltage
Symbol VDS vgs
THERMAL CHARACTERISTICS
Characteristic
Symbol
"Total Device Dissipation, T^ = 25°C
Derate above 25°C
PD
Storage Temperature
Tstg
Thermal Resistance Junction to Ambient
RflJA
Package mounted on 99. |
Motorola Semiconductors |
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| BFR31 Transistor | N-channel field-effect transistors |
NXP Semiconductors |
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PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| BFR840L3RHESD | Robust Low Noise Silicon Germanium Bipolar RF Transistor BFR840L3RHESD
Robust Low Noise Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 1.2, 2013-04-09
RF & Protection Devices
Edition 2013-04-09 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.
Legal Disclaimer The information give |
 Infineon |
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| BFR34R | NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS |  Siemens Semiconductor Group |
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| BFR181W | NPN Silicon RF Transistor )For low noise/ high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) BFR 181W
NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA fT = 8GHz
F = 1.45dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 181W RFs Q62702-F |
Siemens Semiconductor Group |
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| BFR96T | Silicon NPN Planar RF Transistor BFR96T
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
RF amplifier up to GH- range specially for wide band antenna amplifier.
Features
D High power gain D Low noise figure D High transition frequency
3
2
94 9308
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 Vishay Telefunken |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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