BFR34Rの購入情報と機能
| この部品の機能は「NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| BFR34R Transistor | NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS |
Siemens Semiconductor Group |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| BFR280W | NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems BFR 280W
NPN Silicon RF Transistor For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA fT = 7.5GHz
F = 1.5dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Orde |
Siemens Semiconductor Group |
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| BFR106 | NPN 5 GHz wideband transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BFR106 NPN 5 GH- wideband transistor
Product specification
September 1995
NXP Semiconductors
NPN 5 GH- wideband transistor
Product specification
BFR106
DESCRIPTION
NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended f |
 NXP Semiconductors |
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| BFR949 | NPN Silicon RF Transistor BFR949F
NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
fT = 9 GHz
3 1
2
F = 1 dB at 1 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR949F
Maximum Ratings Parameter Colle |
 Infineon Technologies AG |
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| BFR840L3RHESD | Robust Low Noise Silicon Germanium Bipolar RF Transistor BFR840L3RHESD
Robust Low Noise Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 1.2, 2013-04-09
RF & Protection Devices
Edition 2013-04-09 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.
Legal Disclaimer The information give |
 Infineon |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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