BCR6AMの購入情報と機能
| この部品の機能は「MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| BCR6AM Data | MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE MITSUBISHI SEMICONDUCTOR TRIAC
BCR6AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR6AM
OUTLINE DRAWING
10.5 MAX
Dimensions in mm
4.5 4
16 MAX
3.2±0.2
1.3
12.5 MIN 3.8 MAX
TYPE NAME VOLTAGE CLASS
1.0
0.8
2.5
2.5
7.0
φ3.6±0.2 0.5
2.6
123 24 1 2 33 4
Me |
Mitsubishi Electric Semiconductor |
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| BCR6AM Triac | Triac 6 Amperes/400-600 Volts |
Powerex Power Semiconductors |
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| BCR6AM Data | MEDIUM POWER USE NON-INSULATED TYPE |
Mitsubishi Electric Semiconductor |
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PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| BCR16LM-14LB | Triac Preliminary Datasheet
BCR16LM-14LB
Triac
Medium Power Use Features
IT (RMS) : 16 A VDRM : 800 V IFGTI, IRGTI, IRGT III : 30 mA Viso : 1800V The Product guaranteed maximum junction temperature 150 C Insulated Type Planar Type UL Recognized : File No. E223904 R07DS0060EJ0100 Rev.1.00 Jul 27, |
 Renesas Technology |
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| BCR12CM | MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE MITSUBISHI SEMICONDUCTOR TRIAC
BCR12CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR12CM
OUTLINE DRAWING
10.5 MAX
3.2±0.2
Dimensions in mm
4.5 4
1.3
16 MAX
12.5 MIN 3.8 MAX
TYPE NAME VOLTAGE CLASS
1.0
0.8
2.5
2.5
4.5
7.0
φ3.6±0.2
0.5
2.6
123 24 1 2 33 4
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Mitsubishi Electric Semiconductor |
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| BCR169 | PNP Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) BCR 169
PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 4.7kΩ)
Type BCR 169
Marking Ordering Code WSs Q62702-C2340
Pin Configuration 1=B 2=E 3=C
Package SOT-23
Maximum Ratings Parameter Collector-emitter voltage Coll |
 Siemens Semiconductor Group |
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| BCR112F | NPN Silicon Digital Transistor BCR112...
NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ) For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package
BCR112, F, L3 BCR112T, W
C 3
BCR112U
C1 6
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 Infineon Technologies AG |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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