BCR12CMの購入情報と機能
| この部品の機能は「MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| BCR12CM Data | MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE MITSUBISHI SEMICONDUCTOR TRIAC
BCR12CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR12CM
OUTLINE DRAWING
10.5 MAX
3.2±0.2
Dimensions in mm
4.5 4
1.3
16 MAX
12.5 MIN 3.8 MAX
TYPE NAME VOLTAGE CLASS
1.0
0.8
2.5
2.5
4.5
7.0
φ3.6±0.2
0.5
2.6
123 24 1 2 33 4
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Mitsubishi Electric Semiconductor |
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| BCR12CM Triac | Triac 12 Amperes/400-600 Volts |
Powerex Power Semiconductors |
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PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| BCR166W | PNP Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) BCR 166W
PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7kΩ, R2=47kΩ)
Type BCR 166W
Marking Ordering Code WTs UPON INQUIRY
Pin Configuration 1=B 2=E 3=C
Package SOT-323
Maximum Ratings Parameter Collector-emitter |
 Siemens Semiconductor Group |
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| BCR10UM | MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE MITSUBISHI SEMICONDUCTOR TRIAC
BCR10UM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
BCR10UM
OUTLINE DRAWING
Dimensions in mm
2.8 ± 0.2
10.2
4.5 1.27
15.5
V
φ3.8 ± 0.2
13.0 MIN
4.2 MAX
TYPE NAME VOLTAGE CLASS
1.4
0.8 2.54 0.6 2.6 ± 0.4
2.54
V Measurement point o |
Mitsubishi Electric Semiconductor |
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| BCR523 | NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) BCR 523
NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1=1kΩ,R2=10kΩ)
Type BCR 523
Marking Ordering Code XGs C62702-C2487
Pin Configuration 1=B 2=E 3=C
Package SOT-23
Maximum Ratings Parameter Collector-emitter voltage Col |
Siemens Semiconductor Group |
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| BCR192U | PNP Silicon Digital Transistor Array BCR192U
PNP Silicon Digital Transistor Array Preliminary data
Switching circuit, inverter, interface circuit,
5 6
4
driver circuit
Two ( galvanic) internal isolated Transistors
with good matching in one package
Built in bias resistor ( R1=22k, R2=47k)
C1 6 B2 5 E2 4
3 2 1
VPW09197
R2 R1 TR1 |
 Infineon Technologies AG |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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