2SD600の購入情報と機能
| この部品の機能は「PNP / NPN Epitaxial Planar Silicon Transistors」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SD2047 | Ratigns and Caracteristics of Fuji Power Transistor For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-733-1700 972-381-9991 Fax http:, , www.collmer.com
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![]() Fuji Electric |
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| 2SD1476 | Power Transistor
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1476
DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V (Min) ·Good Linearity of hFE
APPLICATIONS ·Designed for power switching |
Inchange Semiconductor |
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| 2SD2627 | Color TV Horizontal Deflection Output Applications Ordering number : ENN6478
2SD2627
NPN Triple Diffused Planar Silicon Transistor
2SD2627
Color TV Horizontal Deflection Output Applications
Features
Package Dimensions
unit : mm 2079C
[2SD2627]
10.0
3.5 7.2
High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP pro |
Sanyo Semicon Device |
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| 2SD1875 | NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SD1857
POWER TRANSISTOR
FEATURES
NPN EPITAXIAL SILICON TRANSISTOR
* High breakdown voltage.(BVCEO=120V) * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz)
ORDERING INFORMATION
Pin Assignment 1 2 3 E C B E C B E C B E |
![]() Unisonic Technologies |
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