2SD1875の購入情報と機能
| この部品の機能は「NPN EPITAXIAL SILICON TRANSISTOR」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| 2SD1875 Transistor | NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SD1857
POWER TRANSISTOR
FEATURES
NPN EPITAXIAL SILICON TRANSISTOR
* High breakdown voltage.(BVCEO=120V) * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz)
ORDERING INFORMATION
Pin Assignment 1 2 3 E C B E C B E C B E |
Unisonic Technologies |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SD2544 | Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) Power Transistors
2SD2544
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
Unit: mm
s Features
13.0±0.2 4.2±0.2
5.0±0.1 10.0±0.2 1.0
q q q
2.5±0.2
High foward current transfer ratio hFE Satisfactory linearity of foward current trans |
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| 2SD836A | SI NPN EPITAXIAL PLANAR | Panasonic Semiconductor |
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| 2SD2266 | Silicon NPN triple diffusion planar type(For power switching) Power Transistors
2SD2266
Silicon NPN triple diffusion planar type
For power switching
Unit: mm
s Features
13.0±0.2 4.2±0.2
5.0±0.1 10.0±0.2 1.0
q q q
2.5±0.2
High-speed switching Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping (TC=25˚C) |
Panasonic Semiconductor |
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| 2SD958 | Silicon NPN epitaxial planer type(For high breakdown voltage and low-noise amplification) Transistor
2SD958
Silicon NPN epitaxial planer type
For high breakdown voltage and low-noise amplification Complementary to 2SB788
6.9±0.1
0.4
Unit: mm
2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.5±0.1
s Features
q q q
1.5
1.5 R0.9 R0.9
0.85
Parameter Collector to base voltage Collector to emitter |
Panasonic Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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