2SD545の購入情報と機能
| この部品の機能は「Silifon Epitaxial Planar Type Transistor」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| 2SD545 Transistor | Silifon Epitaxial Planar Type Transistor |
Sanyo Semicon Device |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SD1622 | PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:2040A
PNP, NPN Epitaxial Planar Silicon Transistors
2SB1122, 2SD1622
Low-Frequency Power Amplifier Applications
Applications
· Voltage regulators relay drivers, lamp drivers, electrical equipment.
Features
· Adoption of FBET process.. · Very small size making it easy to provide |
Sanyo Semicon Device |
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| 2SD1180 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1180
DESCRIPTION ·With TO-126 package ·Low collector saturation voltage APPLICATIONS ·Designed for use in audio and radio frequency power amplifiers
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mou |
![]() SavantIC |
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| 2SD873 | Power Transistor
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD873
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 140V (Min) ·High Power Dissipation ·High Current Capability
APPLICATIONS ·High power amplifier applications. ·High power switching applicat |
Inchange Semiconductor |
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| 2SD2352 | Silicon NPN Triple Diffused Type TRANSISTOR TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2352
Power Amplifier Applications
2SD2352
Unit: mm
High DC current gain: hFE = 800 to 3200 Low collector saturation voltage: VCE (sat) = 0.3 V (typ.)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-ba |
Toshiba Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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